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| APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W POWER MOS V (R) FREDFET B2VFR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. T-MAXTM TO-264 LVFR * Identical Specifications: T-MAXTM or TO-264 Package * Lower Leakage * Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter D G S * Faster Switching * 100% Avalanche Tested All Ratings: TC = 25C unless otherwise specified. APT10M09 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 Repetitive Avalanche Energy Single Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 100 100 400 5 30 40 625 5.0 Volts Watts W/C C Amps mJ -55 to 150 300 100 50 (Repetitive and Non-Repetitive) 1 4 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 5 MIN TYP MAX UNIT Volts Amps 100 100 0.009 100 500 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA 050-5905 rev- 11-99 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpower.com Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10M09 B2VFR - LVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS VGS = 15V MIN TYP MAX UNIT pF 10030 3730 1370 340 109 131 18 36 51 9 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller") Charge Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Pulsed Source Current 1 Continuous Source Current (Body Diode) (Body Diode) 6 Diode Forward Voltage Peak Diode Recovery t rr Q rr IRRM Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ON TI ED AT NC RM VA FO AD IN ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 100 400 1.3 5 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C 190 370 Tj = 125C 0.4 1.7 9 15 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.20 40 4 Starting T = +25C, L = 600H, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature. 6 I -I [Cont.], di/ = 100A/s, V = 50V, T 150C, R = 2.0W S D R j G dt 1 Repetitive Rating: Pulse width limited by maximum T j 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-5905 rev- 11-99 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Gate Collector Emitter Gate Collector Emitter 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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